TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit 2SK1830 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source volta.
ility upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) 2SK1830 Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K1833 |
Panasonic |
2SK1833 | |
2 | K1834 |
Panasonic |
Silicon N-Channel Power F-MOS | |
3 | K1835 |
Hitachi Semiconductor |
2SK1835 | |
4 | K1839 |
Sanyo |
2SK1839 | |
5 | K180 |
Aeroflex |
Silicon Zener Diodes | |
6 | K180 |
Knox Inc |
LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | |
7 | K1800G |
JIEJIE |
Sidac | |
8 | K1800G |
Sunmate |
Axial Leaded Silicon Bilateral Voltage Triggered | |
9 | K1800S |
JIEJIE |
Sidac | |
10 | K1800y |
Littelfuse |
Thyristors | |
11 | K1801BM1B |
ETC |
16-bit microprocessor | |
12 | K1801VM1A |
ETC |
16-bit microprocessor |