K1808 - Hitachi Semiconductor

K1808 2SK1808

2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to.

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I
*1 D(pulse) I DR Pch
*2 Tch Tstg Ratings 900 ±30 4 10 4 35 150
  –55 to +150 Unit V V A .