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K1567 - Hitachi Semiconductor

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K1567 2SK1567

2SK1566, 2SK1567 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratin.

Features






• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 7 Unit V VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 V A A A W °C °C 28 7 35 15.

The same part from a different manufacturer

Datasheet K1567 - VBsemi K1567

K1567-VB K1567-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(.

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