Ordering number:EN3567 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1429 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1429] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-So.
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1429
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2052C
[2SK1429]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K142 |
Sanyo Semicon Device |
Very High-Speed Switching Applications | |
2 | K142 |
Integrated Circuit Systems |
OPL3/4+Codec Portable Clock Source | |
3 | K1420 |
Sanyo Semicon Device |
2SK1420 | |
4 | K1421 |
Sanyo |
2SK1421 | |
5 | K1422 |
Sanyo |
2SK1422 | |
6 | K1423 |
Sanyo |
2SK1423 | |
7 | K1424 |
Sanyo |
2SK1424 | |
8 | K1425 |
Sanyo |
2SK1425 | |
9 | K1426 |
Sanyo |
2SK1426 | |
10 | K1427 |
Sanyo |
2SK1427 | |
11 | K1428 |
Sanyo |
2SK1428 | |
12 | K140 |
Ceramate |
Silicon bilateral voltage triggered switch |