JT100K120F2MA1E - JILIN SINO

JT100K120F2MA1E IGBT Modules

IGBT IGBT Modules R JT100K120F2MA1E IGBT MAIN CHARACTERISTICS IC VCES Vcesat_typ （Vge=15V） 100 A 1200 V 1.9V  UPS  APPLICATIONS  UPS System  Welding Package FS , VCE(sat), typ =1.9V,IC = 100A and TC= 25°C VCEsat  FEATURES FS Technology Low saturation voltage: VCE(sat), typ =1.9V,IC = 100A and TC = 25°C VCEsat with positive Te.

Features

FS Technology
Low saturation voltage: VCE(sat), typ =1.9V,IC = 100A and TC = 25°C
VCEsat with positive Temperature Coefficient
Low Switching Losses ORDER MESSAGE Order codes Marking JT100K120F2MA1E JT100K120F2MA1E Package Packaging Device Weight 163g(typ) ：202202A 1/10 R JT100K120F2MA1E ABSOLUTE RATINGS (Tc=25℃) Parameter － Collector-Emmiter Voltage Collector Current-continuous （ 1） Collector Current
  – pulse （note 1） Gate-Emmiter Voltage Power Dissipation Symbol Vces IC T=25℃ T=100℃ ICM VGES PD TC=25℃ Value 1200 200 100 200 ±20 517 Unit V A A A V W.