at any time, without notice. Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, .
High performance
— 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming (BEFP) at 5 μ s/ byte (Typ) — 1.8 V buffered programming at 7 μ s/byte (Typ) — Multi-Level Cell Technology: Highest Density at Lowest Cost — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte main blocks
Security
— One-Time Programmable Registers:
• 64 unique factory device identifier .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JS28F256P30T85 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
2 | JS28F256P30TFE |
Micron |
Parallel NOR Flash Embedded Memory | |
3 | JS28F256P30B85 |
Intel Corporation |
Intel StrataFlash Embedded Memory | |
4 | JS28F256P30B95 |
Numonyx |
Embedded Memory | |
5 | JS28F256P30BFE |
Micron |
Parallel NOR Flash Embedded Memory | |
6 | JS28F256P30BFF |
Micron |
Parallel NOR Flash Embedded Memory | |
7 | JS28F256P33BFE |
Micron |
Parallel NOR Flash Embedded Memory | |
8 | JS28F256P33TFE |
Micron |
Parallel NOR Flash Embedded Memory | |
9 | JS28F256J3A |
Intel Corporation |
Intel StrataFlash Memory | |
10 | JS28F256J3C |
Intel |
StrataFlash Memory | |
11 | JS28F256J3F105 |
Numonyx |
256-Mbit StrataFlash Embedded Memory | |
12 | JS28F256M29EW |
MICRON |
Parallel NOR Flash Embedded Memory |