JCS50N20WT - JILIN SINO-MICROELECTRONICS

JCS50N20WT N-CHANNEL MOSFET

R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/d.

Features

Low gate charge
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product ORDER MESSAGE Order codes Marking JCS50N20WT-O-W-N-B JCS50N20WT JCS50N20ABT-O-AB-N-B JCS50N20ABT Package TO-247 TO-3PB Halogen Free NO NO Packaging Tube Tube Device Weight 6.1g (typ) 5.14g (typ) ：201510D 1/9 R JCS50N20T ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current
  – pulse（note 1） IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy （note 2） EAS ( 1) Ava.