JANTXV2N6849 - International Rectifier

JANTXV2N6849 P-Channel MOSFET

The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs.

Features

 Repetitive Avalanche Ratings
 Dynamic dv/dt Rating
 Hermetically Sealed
 Simple Drive Requirements
 ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Parameter Value ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR .