JANTXV2N6792 - International Rectifier

JANTXV2N6792 POWER MOSFET N-CHANNEL

PD -90428D IRFF320 JANTX2N6792 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF320 400V 1.8Ω ID 2.0A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient .

Features

n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Unit.