JANTX2N3879 - Microsemi Corporation

JANTX2N3879 NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices www.DataSheet4U.com Qualified Level JANTX JANTXV 2N3879 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range Symb.

Features

E = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3879 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 4.0 Adc, IB = 0.4 Adc Base-Emitter Saturation Voltage IC = 4.0 Adc, IB = 0.4 Adc Base-Emitter Voltage ww.