JANTX2N2222A - Microsemi Corporation

JANTX2N2222A NPN SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC * * Available to JANS quality level only. 2N2222A 2N2222AL 2N2222AUA 2N2222AUB 2N2222AUBC *.

Features

s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Symbol Min. Max. Unit V(BR)CEO ICBO IEBO ICES 50 Vdc 10 μAdc 10 ηAdc 10 μAdc 10 ηAdc 50 ηAdc T4-LDS-0060 Rev. 2 (100247) TO-18 (TO-206AA) 2N2221A, 2N22.