JANTX1N5552 - Microsemi

JANTX1N5552 (1N5550 / 1N5551 / 1N5552 / 1N5553 / 1N5554)

The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N555.

Features

554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55°C; L = .375 inch (1) (2) (3) A dc 5 5 5 5 5 Col. 5 IFSM IO = 2 A dc tp = 1/120 s TA = +55°C A(pk) 100 100 100 100 100 Col. 6 TJ Col. 7 IO2 TA = +55°C (2) (4) A dc 3 3 3 3 3 Col. 8 TSTG The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. V dc 1N5550, 1N5550US 1N5551, 1N5551US 1N5552, 1N5552US 1N555.