The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 November 2000. INCH-POUND MIL-PRF-19500/376E 31 August 2000 SUPERSEDING MIL-PRF-19500/376D 21 August 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, .
UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 mA dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 mW/°C above TA = +37.5°C (2) Derate linearly at 4.76 mW/°C above TA = +63.5°C. 1.4 Primary electrical characteristics. hfe Limits VCE = 5 V dc IC = 1 mA dc f = 1 kHz Cobo IE = 0 VCB = 5 V dc 100 kHz ≤ f ≤ 1 MHz pF Min Max 250 900 2.0 7.0 |hfe|2 IC = 500 µ A dc VCE = 5 V dc f = 30 MHz VCE(sat) (1) IC = 1.0 mA dc IB = 0.1 mA dc V dc 5.0 0.3 (1) Pulsed (see 4.5.1). Beneficial comments (recommendat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JANKCA1N4148 |
Microsemi Corporation |
PERFORMANCE SPECIFICATION | |
2 | JANKCB2N2484 |
STMicroelectronics |
SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC | |
3 | JANKCE1N58011 |
Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
4 | JANKCE1N5802 |
Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
5 | JANKCE1N5804 |
Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
6 | JANKCE1N5806 |
Microsemi Corporation |
2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
7 | JANKCE1N5807 |
Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
8 | JANKCE1N5809 |
Microsemi Corporation |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS | |
9 | JAN1N1188 |
Microsemi Corporation |
Military Silicon Power Rectifier | |
10 | JAN1N1190 |
Microsemi Corporation |
Military Silicon Power Rectifier | |
11 | JAN1N2808B |
Microsemi Corporation |
SILICON 50 WATT ZENER DIODES | |
12 | JAN1N4624 |
Microsemi Corporation |
SILICON 400mA LOW NOISE ZENER DIODES |