JANHCA1N4148 - Microsemi Corporation

JANHCA1N4148 PERFORMANCE SPECIFICATION

The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. INCH POUND MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, .

Features

5), 2, 3, 4, and 5. 1.3 Maximum ratings. Type V(BR) VRWM Io TA = 25qC mA 75 (1) 125 (2) 200 (3) 200 (3) IFSM tp = 1/120 s A (pk) 1 1 2 2 TSTG Top Z6JX R6JL R6JC V dc 1N914, UR 1N4531, UR 1N4148-1, UR-1 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 100 100 100 100 V (pk) 75 75 75 75 qC -65 to +200 -65 to +200 -65 to +200 -65 to +200 qC -65 to +175 -65 to +175 -65 to +200 -65 to +200 qC/W 70 70 70 70 qC/W 250 (leaded) 100(UR) qC/W N/A N/A N/A 150 (1) Derate at 0.5 mA/GC above TA = 25GC. (2) Derate at 0.83 mA/GC above TA = 25GC. (3) Derate at 1.14 mA/GC above TA = 2.