TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N.
er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 50 10 10 Vdc ηAdc µAdc ηAdc µAdc µAdc ICBO 2N3634, 2N3635 IEBO ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Tran.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JAN2N3636 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
2 | JAN2N3634 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
3 | JAN2N3634L |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
4 | JAN2N3635 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
5 | JAN2N3635L |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
6 | JAN2N3637 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
7 | JAN2N3637L |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
8 | JAN2N3027 |
Microsemi Corporation |
SCRs 0.5 Amp/ Planear | |
9 | JAN2N3028 |
Microsemi Corporation |
SCRs 0.5 Amp/ Planear | |
10 | JAN2N3029 |
Microsemi Corporation |
SCRs 0.5 Amp/ Planear | |
11 | JAN2N3030 |
Microsemi Corporation |
SCRs 0.5 Amp/ Planear | |
12 | JAN2N3031 |
Microsemi Corporation |
SCRs 0.5 Amp/ Planear |