• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 MAXIMUM RATINGS Operating Temperature: -65°C to +150°C Storage Temperature: -6.
0.75@35 0.65@15 I @V R R VOLTS 15 50 16 16 16 50 C T PICO FARADS 2.0 2.0 2.0 2.0 4.5 4.5 1 1 1 1 2 2 ESDS CLASS nA 100 200 150 150 150 200 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 Outline LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 40 ˚C/W maximum POLARITY: Cathode end is banded. NOTE: Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | JAN1N5711 |
Compensated Deuices Incorporated |
SCHOTTKY BARRIER DIODES | |
2 | JAN1N5711-1 |
Compensated Deuices Incorporated |
SCHOTTKY BARRIER DIODES | |
3 | JAN1N5614 |
Microsemi Corporation |
MILITARY RECTIFIERS | |
4 | JAN1N5616 |
Microsemi Corporation |
MILITARY RECTIFIERS | |
5 | JAN1N5618 |
Microsemi Corporation |
MILITARY RECTIFIERS | |
6 | JAN1N5620 |
Microsemi Corporation |
MILITARY RECTIFIERS | |
7 | JAN1N5622 |
Microsemi Corporation |
MILITARY RECTIFIERS | |
8 | JAN1N1188 |
Microsemi Corporation |
Military Silicon Power Rectifier | |
9 | JAN1N1190 |
Microsemi Corporation |
Military Silicon Power Rectifier | |
10 | JAN1N2808B |
Microsemi Corporation |
SILICON 50 WATT ZENER DIODES | |
11 | JAN1N4624 |
Microsemi Corporation |
SILICON 400mA LOW NOISE ZENER DIODES | |
12 | JAN1N6036 |
Microsemi Corporation |
(JAN1N60xx) BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |