J599 - NEC

J599 2SJ599

The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ599 PACKAGE TO-251 TO-252 FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low Ciss: Ciss = 1300 pF TYP. • Built-in gate protection diode.

Features

• Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS =
  –10 V, ID =
  –10 A) RDS(on)2 = 111 mΩ MAX. (VGS =
  –4.0 V, ID =
  –10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package 2SJ599-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251)
  –60 + 20 + 20 + 50 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature www.DataSh.