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Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. www.DataSheet4U.com 3.2 Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specifications .
· Low ON-resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating mounting.
www.DataSheet4U.com
3.2
Package Dimensions
unit:mm 2078B
[2SJ584LS]
10.0
3.5 7.2
4.5
2.8
16.1
16.0
0.9 1.2
14.0
3.6
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS
Conditions
0.
J584 - Sanyo
www.DataSheet4U.com Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications F.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | J5819-1 |
Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 2 | J5819UR-1 |
Compensated Deuices Incorporated |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 3 | J5822 |
Compensated Deuices Incorporated |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 4 | J5822US |
Compensated Deuices Incorporated |
3 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 5 | J585LS |
Sanyo Semicon Device |
2SJ585LS |
|
| 6 | J500 |
Vishay Siliconix |
Current Regulator Diodes |
|
| 7 | J500 |
InterFET |
Current Regulator Diode |
|
| 8 | J500 |
Micross |
Current Reg. Diode |
|
| 9 | J500 |
Siliconix |
n-channel JFET |
|
| 10 | J501 |
Vishay Siliconix |
Current Regulator Diodes |
|
| 11 | J501 |
InterFET |
Current Regulator Diode |
|
| 12 | J501 |
Micross |
Current Reg. Diode |
|