J508 - Toshiba

J508 2SJ508

2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.7 S (typ.) l Low leakage current : IDSS = −100 µA (VDS = −100 V) l Enh.

Features

.) Thermal Characteristics Characteristics Symbol Max Unit Marking Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W ZE Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A Note 4: Repetitive rating: Pulse width limited by maximum channel temperature (The two digits represent This transistor is an electrostatic sensitive device. Please handle with caution. the part number.) 1 2002-06-26 Electric.