J321 - Siliconix

J321 n-channel JFET

n-channel JFETs designed for • • • • VHF Buffer Amplifiers • IF Amplifiers H Performance Curves NIP See Section 4 BENEFITS • High Gain 9fs = 120,000 I1mho Typical • Wide Dynamic Range • Low Intermodulation Distortion ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ......... ...... .-25 V Gate Current ..... __ ......... 100m.

Features

tage 4 A BVGSS Gate-Source Breakdown Voltage -2 -25 -10 -1 -25 -4 -3 -25 -10 V VDS '" 5 V. ID - 1 rnA IG - -1 J1A, VDS - 0 V I,15 16 T I C IDSS VGSlfl Saturation Drain Current (Note 2) 100 Gate-Source Forward Voltage 500 80 1 250 200 1 700 mA VDS'" 15 V, VGS - 0 V 1 V IG - 1 rnA, VOS - 0 V rDS(on) Drain-Source ON Resistan;e 10 11 8