monolithic dual n-channel JFETs designed for • • • FEY Input Amplifiers •• Low and Medium Frequency Amplifiers • Impedance Converters • Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage Forward Gate Current. Device Dissipation (each side) @TA = 85°C derate 7.5 mWrC Total Device Dissipatio.
5°C unless otherwise noted)
D2 S2
J1401
J1402 Jl403
J1404 J1405
J1406
Ch..,cterost,c
M," M," MI.. M," M...
Un,t Max. Min M.. M,n Mix Mon M..
TestCond,"ons
, BVGSS
Gate-5ource Breakdown
-~
Voltage
-SO
-S
-SO
-50
-SO
V
VDS O.IG - -lIJA
2
IGSS
Gale Re"er~e CUffent INote 11
-100
WD _'00 -W
_100
-'00 ,A
VDS o VGS -JOV
3 S VGS(off)
T
,4 ~ VGS
5 ClOSS
Gate
·SourceCuto!i Voltage
Gate-Source Voltage lon
Salurat,on Dra,nCurfenl (Note:?1
-5-25 -5-25 -5-2.S -5 _25 5 -25 -5-25
V
-23
-23
-23
-23
-23
-23
0.5100 05100 0.5100 0510.0 05100 05100 mA
vDS 15V ID = , cA VOG ~ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | J1401 |
Siliconix |
monolithic dual n-channel JFET | |
2 | J1402 |
Siliconix |
monolithic dual n-channel JFET | |
3 | J1403 |
Siliconix |
monolithic dual n-channel JFET | |
4 | J1404 |
Siliconix |
monolithic dual n-channel JFET | |
5 | J1406 |
Siliconix |
monolithic dual n-channel JFET | |
6 | J141 |
ETC |
2SJ141 | |
7 | J147 |
ETC |
Transistor | |
8 | J105 |
Vishay Telefunken |
N-Channel JFETs | |
9 | J105 |
Fairchild Semiconductor |
N-Channel Switch | |
10 | J105 |
Siliconix |
n-channel JFET | |
11 | J106 |
Fairchild Semiconductor |
N-Channel Switch | |
12 | J106 |
Vishay Telefunken |
N-Channel JFETs |