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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain.
·With TO-3P packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
24
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation
480
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SY.
IXTQ460P2 - IXYS
PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) IXTA460P2 IXTP4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTQ40N50L2 |
IXYS |
Power MOSFET |
|
| 2 | IXTQ40N50L2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTQ40N50Q |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTQ40N50Q |
IXYS |
Power MOSFET |
|
| 5 | IXTQ42N25P |
IXYS Corporation |
Power MOSFET |
|
| 6 | IXTQ44N50P |
IXYS Corporation |
Polar N-channel MOSFET |
|
| 7 | IXTQ44N50P |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTQ44P15T |
IXYS |
Power MOSFET |
|
| 9 | IXTQ450P2 |
IXYS |
Power MOSFETs |
|
| 10 | IXTQ450P2 |
INCHANGE |
N-ChannelMOSFET |
|
| 11 | IXTQ470P2 |
INCHANGE |
N-ChannelMOSFET |
|
| 12 | IXTQ470P2 |
IXYS |
Power MOSFET |
|