IXTP75N10P - IXYS

IXTP75N10P N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25°.

Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99158E(12/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK IXTA 75N10P IXTP 75N10P IXTQ 75N10P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 20 28 S DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 2250 pF 890 pF 275 pF VGS = 10 V, VDS = 0.5 VD.