IXTA20N65X - IXYS

IXTA20N65X Power MOSFET

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTA20N65X IXTP20N65X IXTH20N65X VDSS = ID25 = RDS(on) 650V 20A 210m TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 6.

Features

 International Standard Packages
 Low RDS(ON) and QG
 Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5
• ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.5 V 100 nA 5 A 50 A 210 m Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Mot.