IXGP15N120B2 - IXYS

IXGP15N120B2 IGBT

HiPerFASTTM IGBT IXGA 15N120B2 IXGP 15N120B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE(sat) tfi(typ) =1200 V = 30 A = 3.5 V = 137 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 2.

Features

• International standard packages JEDEC TO-220AB and TO-263AA
• Low switching losses
• MOS Gate turn-on - drive simplicity Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV CES VGE(th) I C = 250 µA, V GE = 0 V IC = 250 µA, VCE = VGE ICES VCE = VCES V =0V GE I GES V CE = 0 V, V GE = ±20 V VCE(sat) IC = ICE90, VGE = 15 Characteristic Values Min. Typ. Max. 1200 2.5 V 5.0 V TJ = 25°C T J = 125°C 100 µA 3.5 mA ±100 nA TJ = 125°C 3.5 V 2.7 V Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power sup.