IXFX60N55Q2 - IXYS Corporation

IXFX60N55Q2 HiPerFET Power MOSFETs Q-Class

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFK 60N55Q2 IXFX 60N55Q2 VDSS ID25 RDS(on) = = = 550 V 60 A 88 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ.

Features

z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z VGS = 10 V, ID = 0.5
• ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 88 m Ω Easy to mount Space sav.