IXFX48N60P - IXYS Corporation

IXFX48N60P Power MOSFET

TM www.DataSheet4U.com HiPerFET PolarHV Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr = = ≤ ≤ 600 V 48 A 135mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ .

Features

l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 135 V V nA µA µA mΩ l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights res.