isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.
·With TO-220F packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
36
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation
36
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THE.
Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET (Electrically Isolated Tab) IXFP36N20X3M VDSS = ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFP36N20X3 |
IXYS |
Power MOSFET | |
2 | IXFP36N20X3 |
INCHANGE |
N-Channel MOSFET | |
3 | IXFP30N60X |
IXYS |
Power MOSFET | |
4 | IXFP30N60X |
INCHANGE |
N-Channel MOSFET | |
5 | IXFP34N65X2 |
IXYS |
Power MOSFET | |
6 | IXFP34N65X2 |
INCHANGE |
N-Channel MOSFET | |
7 | IXFP34N65X2M |
INCHANGE |
N-Channel MOSFET | |
8 | IXFP34N65X2M |
IXYS |
Power MOSFET | |
9 | IXFP38N30X3M |
Littelfuse |
Power MOSFET | |
10 | IXFP3N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
11 | IXFP3N50PM |
IXYS Corporation |
Power MOSFET | |
12 | IXFP3N80 |
IXYS Corporation |
Power MOSFET |