Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 VDSS ID25 RDS(on) = 600V = 22A ≤ 360mΩ TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net T.
z z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-220 TO-3P TO-247 300 260 1.13 / 10 3.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z z z High Power Density Easy to Mount Space Savings Applications z 25 μA 1.25 mA 360 mΩ z z z z VGS = 10V, ID =.
Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrins.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFP22N65X2 |
IXYS |
Power MOSFET | |
2 | IXFP22N65X2 |
INCHANGE |
N-Channel MOSFET | |
3 | IXFP22N65X2M |
IXYS |
Power MOSFET | |
4 | IXFP22N65X2M |
INCHANGE |
N-Channel MOSFET | |
5 | IXFP220N06T3 |
IXYS |
Power MOSFET | |
6 | IXFP220N06T3 |
INCHANGE |
N-Channel MOSFET | |
7 | IXFP20N50P3 |
IXYS |
Power MOSFET | |
8 | IXFP20N50P3M |
IXYS |
Power MOSFET | |
9 | IXFP20N85X |
IXYS |
Power MOSFET | |
10 | IXFP20N85X |
INCHANGE |
N-Channel MOSFET | |
11 | IXFP230N075T2 |
IXYS Corporation |
Power MOSFET | |
12 | IXFP230N075T2 |
INCHANGE |
N-Channel MOSFET |