• N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protection functions. Type ITS 4140N Ordering code SP000240073 Package PG-SOT223 Datasheet Page 1 Rev. 2.1, 2006-07-24 Block Diagram Control Circuit RIN IN 1 Temperature Sensor GND ITS 4140N .
• Current controlled input
• Short circuit protection
• Current limitation
• Overload protection
Product Summary Overvoltage protection Operating voltage On-state resistance Operating Temperature
Vbbin(AZ) Vbb(on) RON
Ta
62 V 4,9...60 V
1Ω -30 … +85 °C
• Overvoltage protection (including load dump)
• Switching inductive loads
• Clamp of negative voltage at output with inductive loads
PG-SOT223
• Thermal shutdown with restart
• ESD
– Protection
4
• Loss of GND and loss of Vbb protection
• Very low standby current
• Reverse battery protection
• Improved electromagnetic compatibility (EM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ITS4141D |
Infineon |
Smart High-Side Power Switch | |
2 | ITS4141N |
Infineon |
Smart High-Side Power Switch | |
3 | ITS4142N |
Infineon |
Smart High-Side Power Switch | |
4 | ITS4100S-SJ-N |
Infineon |
Smart High-Side NMOS-Power Switch | |
5 | ITS410E2 |
Infineon |
Smart High-Side Power Switch | |
6 | ITS41k0S-ME-N |
Infineon |
Smart High-Side NMOS-Power Switch | |
7 | ITS42008-SB-D |
Infineon |
Smart Octal High-Side NMOS-Power Switch | |
8 | ITS4200S-ME-N |
Infineon |
Smart High-Side NMOS-Power Switch | |
9 | ITS4200S-ME-O |
Infineon |
Smart High-Side NMOS-Power Switch | |
10 | ITS4200S-ME-P |
Infineon |
Smart High-Side NMOS-Power Switch | |
11 | ITS4200S-SJ-D |
Infineon |
Smart High-Side NMOS-Power Switch | |
12 | ITS428L2 |
Infineon |
Smart High-Side Power Switch |