ISP80N08S2L - INCHANGE

ISP80N08S2L N-Channel MOSFET

isc N-Channel MOSFET Transistor ISP80N08S2L FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- VDSS= 75V(Min) ·Static Drain-Source On-Resistance RDS(on) :7.1mΩ(Max) ·175°C operating temperature ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUT.

Features

·Drain Current
  –ID= 80A@ TC=25℃
·Drain Source Voltage- VDSS= 75V(Min)
·Static Drain-Source On-Resistance RDS(on) :7.1mΩ(Max)
·175°C operating temperature
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature .