ECOSPARK) Ignition IGBT 500 mJ, 450 V, N-Channel Ignition IGBT ISL9V5045S3ST-F085C Features • SCIS Energy = 500 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications M.
• SCIS Energy = 500 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Collector to Emitter Breakdown Voltage BVCER
480
V
(IC = 1 mA)
Emitter to Collector Voltage − Reverse
BVECS
24
V
Battery Condition (IC = 10 mA)
ISCIS = 39.2 A, L = 650 mHy, RGE = 1 kW, TC = 25°C (Note 1)
ESCIS25
500
mJ
ISCIS = 31.1 A, L =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ISL9V5045S3ST-F085 |
ON Semiconductor |
N-Channel IGBT | |
2 | ISL9V5045S3ST |
Fairchild Semiconductor |
EcoSPARK N-Channel Ignition IGBT | |
3 | ISL9V5045S3ST_F085 |
Fairchild Semiconductor |
EcoSPARK N-Channel Ignition IGBT | |
4 | ISL9V5045S3S |
Fairchild Semiconductor |
N-Channel IGBT | |
5 | ISL9V5045S3 |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | ISL9V5036P3 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
7 | ISL9V5036P3 |
ON Semiconductor |
N-Channel IGBT | |
8 | ISL9V5036P3-F085 |
ON Semiconductor |
N-Channel IGBT | |
9 | ISL9V5036P3_F085 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
10 | ISL9V5036S3 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
11 | ISL9V5036S3 |
ON Semiconductor |
N-Channel IGBT | |
12 | ISL9V5036S3S |
Fairchild Semiconductor |
N-Channel Ignition IGBT |