ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application .
• SCIS Energy = 300 mJ at TJ = 25°C
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA)
400
V
BVECS Emitter to Collector Voltage − Reverse
24
V
Battery Condition (IC = 10 mA)
ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1)
ESCIS150 ISCIS = 10.6 A, L = 3..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ISL9V3040D3STV |
ON Semiconductor |
N-Channel IGBT | |
2 | ISL9V3040D3S |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
3 | ISL9V3040D3S |
ON Semiconductor |
N-Channel Ignition IGBT | |
4 | ISL9V3040D3S |
Unisonic Technologies |
N-CHANNEL IGNITION IGBT | |
5 | ISL9V3040P3 |
ON Semiconductor |
N-Channel Ignition IGBT | |
6 | ISL9V3040P3 |
Fairchild Semiconductor |
EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT | |
7 | ISL9V3040P3-F085C |
ON Semiconductor |
N-Channel IGBT | |
8 | ISL9V3040S3 |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
9 | ISL9V3040S3 |
ON Semiconductor |
N-Channel Ignition IGBT | |
10 | ISL9V3040S3S |
Fairchild Semiconductor |
N-Channel Ignition IGBT | |
11 | ISL9V3040S3S |
ON Semiconductor |
N-Channel Ignition IGBT | |
12 | ISL9V3040S3ST-F085C |
ON Semiconductor |
N-Channel IGBT |