. . . . . 1 Maximum ratings 3 Thermal characteristics .
•N-channel,logiclevel
•Verylowon-resistanceRDS(on)
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowreverserecoverycharge(Qrr)
•Highavalancheenergyrating
•175°Coperatingtemperature
•Optimizedforhighfrequencyswitchingandsynchronousrectification
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
3.2
mΩ
ID
170
A
Qos.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ISC030N10NM6 |
Infineon |
MOSFET | |
2 | ISC031N08NM6 |
Infineon |
MOSFET | |
3 | ISC035N10NM5LF |
Infineon |
MOSFET | |
4 | ISC035N10NM5LF2 |
Infineon |
MOSFET | |
5 | ISC036N04NM5 |
Infineon |
MOSFET | |
6 | ISC037N03L5IS |
Infineon |
MOSFET | |
7 | ISC009N06LM5 |
Infineon |
MOSFET | |
8 | ISC011N03L5S |
Infineon |
MOSFET | |
9 | ISC014N08NM6 |
Infineon |
MOSFET | |
10 | ISC015N04NM5 |
Infineon |
MOSFET | |
11 | ISC015N06NM5LF |
Infineon |
MOSFET | |
12 | ISC015N06NM5LF2 |
Infineon |
MOSFET |