PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous m.
⚫ Asynchronous and page mode interface
⚫ Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Page mode read access
Interpage Read access : 60ns, 70ns
Intrapage Read access : 25ns
⚫ Low Power Consumption
Asynchronous Operation < 30 mA
Intrapage Read < 23mA
Standby < 180 µA (max.)
Deep power-down (DPD)
ALL/CLL: < 3µA (Typ)
BLL: < 10µA (Typ)
⚫ Low Power Feature
Temperature Controlled Refresh
Partial Array Refresh
Deep power-down (DPD) mode
⚫ Operating temperature Rang.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS67WVE2M16TALL |
ISSI |
32Mb Async/Page PSRAM | |
2 | IS67WVE2M16TBLL |
ISSI |
32Mb Async/Page PSRAM | |
3 | IS67WVE2M16ALL |
ISSI |
1.8V Core Async/Page PSRAM | |
4 | IS67WVE2M16DBLL |
ISSI |
3.0V Core Async/Page PSRAM | |
5 | IS67WVE2M16EALL |
ISSI |
32Mb Async/Page PSRAM | |
6 | IS67WVE2M16EBLL |
ISSI |
32Mb Async/Page PSRAM | |
7 | IS67WVE2M16ECLL |
ISSI |
32Mb Async/Page PSRAM | |
8 | IS67WVE1M16EALL |
ISSI |
16Mb Async/Page PSRAM | |
9 | IS67WVE1M16EBLL |
ISSI |
16Mb Async/Page PSRAM | |
10 | IS67WVE1M16ECLL |
ISSI |
16Mb Async/Page PSRAM | |
11 | IS67WVE1M16TALL |
ISSI |
16Mb Async/Page PSRAM | |
12 | IS67WVE1M16TBLL |
ISSI |
16Mb Async/Page PSRAM |