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The IS66/67WVO32M8DALL/BLL are integrated memory device containing 256Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 32M words by 8 bits. The device supports Octal Peripheral Interface (Address, Command, and Data through 8 SIO pins), Very Low Signal Count (11 signal pins; SCLK, CS#, DQSM, and 8 SIOs), Hidden Refresh Opera.
• Industry Standard Serial Interface
- Octal Peripheral Interface (OPI) Protocol - Low Signal Counts :11 Signal pins (CS#,
SCLK, DQSM, SIO0~SIO7)
• High Performance
- Up to 400MB/s - Double Transfer Rate (DTR) Operation - 200MHz (400MB/s) at 105°C - Source Synchronous Output signal during
Read Operation (DQSM) - Data Mask during Write Operation
(DQSM) - Configurable Latency for Read/Write
Operation) - Supports Variable Latency mode and
Fixed Latency mode - Configurable Drive Strength - Supports Wrapped Burst mode and
Continuous Burst mode - Supports Deep Power Down mode - Hidden Refresh
• Har.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS66WVO32M8DBLL |
ISSI |
256Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 2 | IS66WVO16M8EDALL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 3 | IS66WVO16M8EDBLL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 4 | IS66WVO4M8FALL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 5 | IS66WVO4M8FBLL |
ISSI |
1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 6 | IS66WVO8M8DALL |
ISSI |
64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 7 | IS66WVO8M8DBLL |
ISSI |
64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY |
|
| 8 | IS66WV1M16DALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 9 | IS66WV1M16DBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 10 | IS66WV1M16EALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 11 | IS66WV1M16EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 12 | IS66WV51216ALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|