AUGUST 2023 The IS43/46LD32128B is 4Gbit CMOS LPDDR2 DRAM. The device is organized as 8 banks of 16Meg words of 32bits. This product uses a double-datarate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O.
• DDP (Dual Die Package) with 2 x 2Gb LPDDR2
• Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
• High Speed Un-terminated Logic(HSUL_12) I/O Interface
• Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
• Four-bit Pre-fetch DDR Architecture
• Multiplexed, double data rate, command/address inputs
• Eight internal banks for concurrent operation
• Bidirectional/differential data strobe per byte of data (DQS/DQS#)
• Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
• ZQ Calibration
• On-c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS46LD32160A |
ISSI |
512Mb Mobile LPDDR2 S4 SDRAM | |
2 | IS46LD32320A |
ISSI |
1Gb Mobile LPDDR2 S4 SDRAM | |
3 | IS46LD32320C |
ISSI |
1Gb Mobile LPDDR2 S4 SDRAM | |
4 | IS46LD32640B |
ISSI |
2Gb Mobile LPDDR2 S4 SDRAM | |
5 | IS46LD32800A |
ISSI |
256Mb Mobile LPDDR2 S4 SDRAM | |
6 | IS46LD32800B |
ISSI |
256Mb Mobile LPDDR2 S4 SDRAM | |
7 | IS46LD16128B |
ISSI |
2Gb Mobile LPDDR2 S4 SDRAM | |
8 | IS46LD16160A |
ISSI |
256Mb Mobile LPDDR2 S4 SDRAM | |
9 | IS46LD16160B |
ISSI |
256Mb Mobile LPDDR2 S4 SDRAM | |
10 | IS46LD16320A |
ISSI |
512Mb Mobile LPDDR2 S4 SDRAM | |
11 | IS46LD16640A |
ISSI |
1Gb Mobile LPDDR2 S4 SDRAM | |
12 | IS46LD16640C |
ISSI |
1Gb Mobile LPDDR2 S4 SDRAM |