IS43LD16160B - ISSI

IS43LD16160B 256Mb Mobile LPDDR2 S4 SDRAM

JUNE 2022 The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM. The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data w.

Features

• Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
• High Speed Un-terminated Logic(HSUL_12) I/O Interface
• Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
• Four-bit Pre-fetch DDR Architecture
• Multiplexed, double data rate, command/address inputs
• Four internal banks for concurrent operation
• Bidirectional/differential data strobe per byte of data (DQS/DQS#)
• Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
• ZQ Calibration
• On-chip temperature sensor to control self refresh.