These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to ach.
JEDEC standard 3.3V, 2.5V, 1.8V power supply
• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 4K refresh cycle / 64ms
• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS42VM16160E |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM | |
2 | IS42VM16160M |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM | |
3 | IS42VM16200C |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
4 | IS42VM16200D |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM | |
5 | IS42VM16800E |
ISSI |
128Mb Mobile Synchronous DRAM | |
6 | IS42VM16800F |
ISSI |
2M x 16Bits x 4Banks Mobile Synchronous DRAM | |
7 | IS42VM32100C |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM | |
8 | IS42VM32100D |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM | |
9 | IS42VM32160D |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
10 | IS42VM32160E |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM | |
11 | IS42VM32200K |
ISSI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM | |
12 | IS42VM32200M |
ISSI |
512K x 32Bits x 4Banks Mobile Synchronous DRAM |