Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide v.
tings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 23
16 96 45 0.30 ± 16 77 14 4.5 5.0 -55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
Junction-to-Case
–
–
–
RθJ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLU2703 |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRLU2703 |
INCHANGE |
N-Channel MOSFET | |
3 | IRLU2705 |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRLU2705 |
INCHANGE |
N-Channel MOSFET | |
5 | IRLU2705PBF |
International Rectifier |
HEXFET Power MOSFET | |
6 | IRLU210A |
Fairchild Semiconductor |
Power MOSFET | |
7 | IRLU220A |
Fairchild Semiconductor |
ADVANCED POWER MOSFET | |
8 | IRLU230A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
9 | IRLU2905 |
International Rectifier |
POWER MOSFET | |
10 | IRLU2905PBF |
International Rectifier |
POWER MOSFET | |
11 | IRLU2905Z |
International Rectifier |
POWER MOSFET | |
12 | IRLU2905Z |
INCHANGE |
N-Channel MOSFET |