$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRLR/U220A BVDSS = 200 V RDS(on) = 0.8Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source .
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRLR/U220A BVDSS = 200 V RDS(on) = 0.8Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLR220 |
Fairchild Semiconductor |
Power MOSFET | |
2 | IRLR210 |
Fairchild Semiconductor |
Power MOSFET | |
3 | IRLR210A |
Fairchild Semiconductor |
Power MOSFET | |
4 | IRLR230 |
Fairchild Semiconductor |
Power MOSFET | |
5 | IRLR230A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
6 | IRLR2703 |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRLR2703 |
INCHANGE |
N-Channel MOSFET | |
8 | IRLR2703PBF |
International Rectifier |
Power MOSFET | |
9 | IRLR2705 |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRLR2705 |
INCHANGE |
N-Channel MOSFET | |
11 | IRLR2705PBF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRLR2905 |
International Rectifier |
POWER MOSFET |