IRLML6302PBF - International Rectifier

IRLML6302PBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a.

Features

cs and PCMCIA cards. G1 S2 IRLML6302PbF HEXFET® Power MOSFET VDSS = -20V 3D RDS(on) = 0.60Ω Micro3TM Base Part Number IRLML6302TRPbF Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML6302TRPbF Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -0.