Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 3.8m 32nC Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-.
sed Surface hJunction-to-Ambient gÃJunction-to-Ambient (PCB Mount)
Notes through are on page 12
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Max. 30 ± 20
150f 110f
600 140 72 0.96 -55 to + 175
y y10 lbf in (1.1N m)
Typ.
–
–
– 0.50
–
–
–
–
–
–
Max. 1.04
–
–
– 62 40
Units V
A W W/°C °C
Units °C/W
1
05/18/04
IRL7833/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage
30
–
–
–
–
–
– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
–
–
– 18
–
–
– mV/°C Reference to 25°C, ID = 1mA
fStatic Drain-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRL7833S |
International Rectifier |
Power MOSFET | |
2 | IRL7833S |
INCHANGE |
N-Channel MOSFET | |
3 | IRL7833 |
International Rectifier |
Power MOSFET | |
4 | IRL7833 |
INCHANGE |
N-Channel MOSFET | |
5 | IRL7833L |
International Rectifier |
Power MOSFET | |
6 | IRL7833LPbF |
International Rectifier |
Power MOSFET | |
7 | IRL7833PbF |
International Rectifier |
Power MOSFET | |
8 | IRL7472L1 |
Infineon |
Power MOSFET | |
9 | IRL7472L1PbF |
International Rectifier |
N-Channel Power MOSFET | |
10 | IRL7472L1TRPbF |
Infineon |
Power MOSFET | |
11 | IRL7472L1TRPbF |
International Rectifier |
N-Channel Power MOSFET | |
12 | IRL7486M |
International Rectifier |
N-Channel Power MOSFET |