IRHMJ53160 - International Rectifier

IRHMJ53160 (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD-96916 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A* 35A* 35A* 35A* IRHMJ57160 100V, N-CHANNEL 5 TECHNOLOGY ™ IRHMJ58160 1000K Rads (Si) TO-254A.

Features

n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Cu.