Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1415 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.087Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 .
s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter I D @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Puls.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHM9130 |
International Rectifier |
RADIATION HARDENED POWER MOSFET | |
2 | IRHM9150 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
3 | IRHM9064 |
IRF |
TRANSISTOR P-CHANNEL | |
4 | IRHM9230 |
IRF |
TRANSISTOR P-CHANNEL | |
5 | IRHM9250 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) | |
6 | IRHM9260 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
7 | IRHM93130 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
8 | IRHM93150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
9 | IRHM93250 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
10 | IRHM2C50SE |
IRF |
TRANSISTOR N-CHANNEL | |
11 | IRHM3054 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
12 | IRHM3130 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE |