IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power l.
• Single event effect (SEE) hardened
• Ultra Low RDS(on)
• Low total gate charge
• Simple drive requirements
• Hermetically sealed
• Electrically isolated
• Ceramic eyelets
• Light weight
• ESD rating: Class 3B per MIL-STD-750, Method 1020
Product Summary
• BVDSS: 500V
• ID : 18A
• RDS(on),max : 32m
• QG, max : 180nC
• REF: MIL-PRF-19500/661
Potential Applications
• DC-DC converter
• Motor drives
Product Validation
TO-254AA Low Ohmic
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications
Description
IR HiRel rad hard HEXFET technology provides high performance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRHM7450 |
IRF |
REPETITIVE AVALANCHE AND dv/dt RATED | |
2 | IRHM7450SE |
IRF |
TRANSISTOR N-CHANNEL | |
3 | IRHM7054 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
4 | IRHM7064 |
IRF |
TRANSISTOR N-CHANNEL | |
5 | IRHM7064 |
International Rectifier |
(IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL | |
6 | IRHM7130 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
7 | IRHM7130 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
8 | IRHM7150 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
9 | IRHM7150 |
International Rectifier |
RADIATION HARDENED POWER MOSFET THRU-HOLE | |
10 | IRHM7160 |
International Rectifier |
Radiation Hardened Power MOSFET | |
11 | IRHM7230 |
International Rectifier |
(IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
12 | IRHM7250 |
IRF |
RADIATION HARDENED POWER MOSFET THRU-HOLE |