IRHM7264SE - IRF

IRHM7264SE TRANSISTOR N-CHANNEL

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1393A REPETITIVE AVALANCHE AND dv/dt RATED IRHM7264SE N-CHANNEL HEXFET® TRANSISTOR SINGLE EVENT EFFECT (SEE) RAD HARD 250 Volt, 0.087Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under.

Features

s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ V GS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulse.