IRHM57264SE - International Rectifier

IRHM57264SE RADIATION HARDENED POWER MOSFET

PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) ID 0.066Ω 35A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single.

Features

n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current 35
* Continuous Drain Current 26 Pulsed Drain Current À 140 Max. Power Dissipation 250 Linear Derating Factor 2.0 Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy Á 500 Avala.