IRHM4150 - International Rectifier

IRHM4150 RADIATION HARDENED POWER MOSFET THRU-HOLE

www.datasheet4u.com PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.065Ω 0.065Ω 0.065Ω 0.065Ω REF: MIL-PRF-19500/603 ® RAD Hard ™ HEXFET TECHNOLOGY IRHM7150 JANSR2N7268 100V, N-CHANNEL ID.

Features

! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating .