IRHF4130 - International Rectifier

IRHF4130 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 90653E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18Ω IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY ID QPL Part.

Features

n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operatin.